| PART |
Description |
Maker |
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| M27W800-150K6TR M27W800 M27W800-100B6TR M27W800-10 |
8 Mbit (1Mb x 8 or 512Kb x 16), Low Voltage UV EPROM and OTP EPROM
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM 8兆8512KB × 16低压紫外线存储器和OTP存储
81兆812KB × 16低压紫外线存储器和OTP存储
8 MBIT (1MB X 8 OR 512KB X 16) LOW VOLTAGE UV EPROM AND OTP EPROM
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M39832 M39832NE 6468 M39832-B12WNE1T M39832-B12WNE |
Single Chip 8 Mbit (1Mb x8 or 512Kb x16) Flash and 256 Kbit Parallel EEPROM Memory
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
From old datasheet system
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29W800B M29W800B100M1R M29W800B100M1TR M29W800B10 |
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)Low Voltage Single Supply Flash Memory
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MPC2105CDG66 MPC2106CDG66 MPC2105C |
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc
|
| M29W800AB M29W800AB120ZA5T M29W800AT80ZA5T M29W800 |
8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
Low-Power Single Buffer/Driver with 3-State Output 5-DSBGA -40 to 85 8兆x812KB的x16插槽，引导块低压单电源闪
RESISTOR: 100 OHM, 1/10W, 1%, PACKAGE 0805 81兆x812KB的x16插槽，引导块低压单电源闪
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory 8兆x812KB的x16插槽，引导块低压单电源闪
Low-Power Single Buffer/Driver with 3-State Output 5-SOT-23 -40 to 85
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| UPD4382362GF-A75B UPD4382322GF-A75B UPD4382182GF-A |
x18 Fast Synchronous SRAM
x16 Fast Synchronous SRAM x16快速同步SRAM
x36 Fast Synchronous SRAM x36快速同步SRAM
x32 Fast Synchronous SRAM X32号，快速同步SRAM
|
Electronic Theatre Controls, Inc.
|
| UPD4382322GF-A67 UPD4382362GF-A67 UPD4382162GF-A75 |
x32 Fast Synchronous SRAM
x16 Fast Synchronous SRAM
x18 Fast Synchronous SRAM
x36 Fast Synchronous SRAM x36快速同步SRAM
|
Lumex, Inc.
|
| MCM4464 MCM44H64 MCM44A64 MCM44B64 MCM44C64 MCM44D |
1MB R4000 Secondary Cache Fast Static RAM Module Set
|
MOTOROLA[Motorola, Inc]
|
| M27C405 4378 M27C405-90N6TR M27C405-100B1TR M27C40 |
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公512KB的存储器
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公12KB的存储器
Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x5 mm; Packaging: Bulk 4兆位× 8检察官办公12KB的存储器
From old datasheet system
4 Mbit (512Kb x 8) OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
